화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2020년 가을 (10/05 ~ 10/08, 부산컨벤션센터(BEXCO))
권호 45권 1호
발표분야 분자전자 부문위원회 I
제목 Realization of Hysteresis-Free Two-Dimensional Perovskite Transistors at Room-Temperature
초록 Organic-inorganic perovskite have been emerging semiconducting material for high-performance optoelectronics such as solar cells, photodetectors, and laser due to their outstanding intrinsic properties. Among them, Two-dimensional Ruddlesden-Popper perovskite(2DRP) has advantages for horizontal charge transport and good air stability owing to layered structure. Based on these merits, several studies have been conducted on transistors over the past two decades. However, perovskite transistors still suffer from inherent defects and high ion migration at room temperature that cause great hysteresis in channel. Therefore, a strategy to reduce hysteresis is required for stable operation. Herein, we fabricated hystereses-free perovkite transistors at room temperature via alkali metal cation additive and self-assembled monolayer. The enhancement of electrical properteis on perovskite transistors was confirmed and improvment on the perovksite film was observed by SEM, PL, GIWAXD.
저자 고지영, HUIHUI ZHU, AO LIU, 노유진, 노용영
소속 포항공과대
키워드 Ruddlesden-Popper perovskite; field-effect transistors; hysteresis-free; defect passivation
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