화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2019년 가을 (10/09 ~ 10/11, 제주컨벤션센터)
권호 44권 2호
발표분야 분자전자 부문위원회 II
제목 Flexible Nonvolatile Organic Transistor Memory with low power operation using Ultrathin Bilayer Dielectric Stack
초록 Following the development of wearable electronics, Organic thin film transistor nonvolatile memories (OTFT-NVMs) with polymeric electret layers have attracted great attention. The low-power operation of OTFT-NVM with polymer blocking dielectric layer (BDL) is challenging because lack of candidate with strong insulating properties at thin thickness. This study shows low-power, flexible NVM using bilayer staking of 3nm electret layer with excellent insulating BDL via initiated chemical vapor deposition. Novel crosslinked poly(1,4-butanediol diacrylate) film was synthesized in role of BDL, showing high breakdown field(Ebreak > 8MV cm-1 with thickness 21.3 nm). 3 nm thick (poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane)) was used as polymer electret layer. Fabricated memory shows large window (>5 V) at reduced programming/erasing voltage less than 15V. The large retention time as long as 108 s. Furthermore, the memory maintain performance at 1.6% of tensile strain.
저자 이창현, 박관용, 최준환, 임성갑
소속 KAIST
키워드 blocking dielectric layers; initiated chemical vapor deposition; organic
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