화학공학소재연구정보센터
학회 한국공업화학회
학술대회 2019년 봄 (05/01 ~ 05/03, 부산 벡스코(BEXCO))
권호 23권 1호
발표분야 무기재료_포스터
제목 Growth Characteristics of Hetero-epitaxial GaN Growth on 2D Hexagonal Boron Nitride by MOCVD
초록 Recently, two-dimensional (2D) layered materials such as graphene, hexagonal boron nitride (h-BN), and transitional metal dichalcogenides (TMDs) have emerged as a unique and promising alternative growth substrate for nitride semiconductor epitaxy. The atomically-sharp surface free of dangling bonds can enable van der Waals epitaxy (vdWE) which can dramatically loosen the conventional conditions of hetero-epitaxy leading to the resolution of undesired strain in the epi-layer as well as enable advanced functionalities such as mechanical release of grown semiconductor films for flexible device applications. In this work, we investigate the nucleation and growth behavior of gallium nitride (GaN) on multi-layer h-BN sequentially grown by metal-organic chemical vapor deposition (MOCVD). Atomic structural characterization of the hetero-epitaxial interface and the effect of h-BN structural quality on the overgrown GaN film is discussed.
저자 김재원, 정호경, 문석호, 김지예, 김종규
소속 POSTECH
키워드 van der waals epitaxy; hexagonal boron nitride; gallium nitride; MOCVD
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