|학술대회||2017년 가을 (11/15 ~ 11/17, 경주 현대호텔)|
|발표분야||G. 나노/박막 재료 분과|
|제목||Film Characteristics of low-k SiOC deposited by Atomic Layer Deposition|
|초록||As the semiconductor devices are integrated in accordance with Moore’s Law, the feature size is reduced and the density of the device is increasing. Accordingly, there are increasing demand for faster speed and higher performance of the devices. One of them is a resistance-capacitance delay (RC delay) which is caused by the influence of parasitic capacitance. In order to reduce RC delay, conventional materials such as SiO2, SiN have been replaced by low-k materials. Silicon oxycarbide (SiOC) is considered to be one of the most promising low-k materials due to its electrical stability and thermal stability.
In this analysis, the deposition of SiOC thin films by remote plasma atomic layer deposition (RPALD) was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O2, Ar, H2, N2 plasmas were respectively used as a precursor and reactants during the deposition process at 100 - 300 °C. In order to deposit thin films with low-k SiOC, deposition temperature and plasma power were controlled to change the film property. Refractive index (RI) value were measured using a spectroscopic ellipsometer (SE). To identify the differences in the composition and the density of the films as the process conditions changed, auger electron spectroscopy (AES) analysis and X-ray reflectometry (XRR) were carried out, and chemical binding state was measured via X-ray photoelectron spectroscopy (XPS). For measuring leakage current, breakdown voltage, and dielectric constant value, current-volatge (I-V) measurement and capacitance-volatage (C-V) measurement were used.
|키워드||gate spacer; Octamethylcyclotetrasiloxan (OMCTS); SiOC; low-k dielectric; Atomic Layer Deposition (ALD)|