|학술대회||2017년 가을 (11/15 ~ 11/17, 경주 현대호텔)|
|발표분야||A. 전자/반도체 재료 분과|
|제목||Surface analysis of N2 plasma treated sapphire substrate for AlN buffer layer|
|초록|| Recently, aluminum nitride (AlN) buffer layer has been actively studied to fabricate high quality gallium nitride (GaN) template for high efficiency light emitting diode (LED) production. We confirmed that AlN deposition after plasma treatment on the substrate has a positive influence on GaN epitaxial growth.
In this study, N2 plasma treatment was performed on commercial patterned sapphire substrate (PSS) by using RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition (MOCVD). Surface with N2 plasma treatment was analyzed to binding energy by x-ray photoelectron spectroscopy (XPS). As a result of XPS, the surface was changed from Al2O3 to AlON, and we confirmed that thickness of AlON layer was about 1nm by transmission electron microscope (TEM). The AlON layer appeared similar to the amorphous pattern as a result of selective area electron diffraction (SAED) pattern analysis. The AlN buffer layer deposited on the grown AlON layer had lower crystallinity than the as-treatment on PSS. Therefore, effect of surface N2 plasma treatment on PSS has lower crystallinity of AlN buffer layer, and is factor to increase epitaxial growth quality of GaN template.
|저자||정우섭, 김대식, 조승희, 김철, 고현아, 이두원, 안민주, 변동진|
|키워드||<P>Sapphire; AlN; Plasma; Buffer; GaN</P>|