화학공학소재연구정보센터
학회 한국재료학회
학술대회 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔)
권호 23권 1호
발표분야 G. 나노/박막 재료 분과
제목 Comparison of back-gate and top-gate SnS2 field-effect transistor with hBN substrate and graphene electrodes
초록 Transition metal dichalcogenides have emerged as a promising candidate for nanoelectronic devices to overcome limitations of Si-based devices. However, most of the researches have been focusing on MoX2 and WX2 (X = S, Se, and Te), which are made using rare earth elements. On the other hand, field-effect transistors using SnS2 could be fabricated with a lower budget because of its lower synthesis temperature and abundance of the element Sn. Therefore, in this research, we use SnS2 as the channel material to demonstrate a high-performance field-effect transistor with graphene electrodes encapsulated between hBN. All 2D materials used in this research were mechanically exfoliated from as-received bulk materials and dry-transferred to reduce impurities as low as possible. Our result showed that a high on/off ratio of more than 5X108, a mobility of ~65 cm2/Vs and a subthreshold swing of ~100 mV/dec with the hBN gate dielectric and the graphene gate electrode. We also compared various contact structures using various combinations of metal (Ni/Au) and bottom/top graphene source/drain electrodes to analyze the difference of lateral/vertical charge conduction.
저자 이정수, 이건우, 서호준, 김소희, 설원제, 이승백
소속 한양대
키워드 <P>Thin-film transistor; graphene; SnS2; hBN</P>
E-Mail