|학술대회||2016년 가을 (11/16 ~ 11/18, 경주 현대호텔)|
|발표분야||G. 나노/박막 재료 분과|
|제목||Thin-Film Barrier Performance of Aluminum-oxide Using the Atomic Layer Deposition Method|
|초록|| In this study, Al2O3 films deposited by the atomic layer deposition (ALD) method, as the passivation layer for noble metal surface, were characterized. Both the effects of trimethyl aluminum (TMA) growth temperature and O2 (Oxygen) gas flow rate were investigated. The X-ray diffraction analysis shows the amorphous characteristic of the 40 nm-thick films grown at 80 oC, the crystallinity of the films was much lower than those grown at 300 and 400 oC. The scanning electron microscopy analyses showed that the surface morphology strongly depended on the crystallinity of the film. The density of the 40 nm thick Al2O3 films can be increased from 2.7 (room temperature deposited) to 3.3 g/cm3. (200 oC deposited)
This was attributed to the better barrier property of the 200 oC deposited Al2O3 film to the amorphous microscopic bulk and almost homogeneous microscopic surface.
|저자||한동석, 김경덕, 박재형, 박종완|
|키워드||Aluminum oxide; thin-film passivation; atomic layer deposition (ALD); film density|