|학술대회||2016년 가을 (11/16 ~ 11/18, 경주 현대호텔)|
|발표분야||H. 한-일 재료공학 워크샵|
|제목||Atomic Layer Deposited Gate Spacer for New Memory Devices|
|초록||As the shrinkage of feature size in device continued, resistance-capacitance (RC) time delay has become the determining factor in chip performance due to non-negligible parasitic capacitance. Therefore, low dielectric constant (k) materials have been studied to reduce parasitic capacitance. Silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) among the low-k materials have attracted much attention due to their excellent thermal, mechanical and electrical stability. Especially, these materials are suitable for gate spacer on account of their low dielectric constant and good wet etch rate.
Among thin film deposition methods, atomic layer deposition (ALD) is considered as the best technique because it enables to deposit thin films with high step coverage and high quality. Also, remote plasma ALD (RPALD) was utilized to enhance the reaction of film deposition and avoid plasma damage.
In this study, we investigated the SiOC and SiOCN RPALD process using Octamethylcyclotetrasiloxan (OMCTS) as a precursor and various plasmas as reactants. Additionally, the physical and electrical characteristics of deposited films were investigated. It was the first research to develop SiOC and SiOCN RPALD process using OMCTS as a precursor. Annealing below 400°C was carried out to remove moisture. Chemical bonding states and compositions have been characterized using Fourier transform infrared spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Film density and thickness was measured by spectroscopic ellipsometry and X-ray reflectivity (XRR) measurement. Dielectric constant of films was determined by capacitance-voltage (C-V) measurement system. Leakage current of films also have been examined by current-voltage (I-V) measurement. Wet etch rate was measured at BHF (1:100 = HF:DI water).
|저자||이재민, 장우출, 김현정, 권영균, 전형탁|
|키워드||gate spacer; Octamethylcyclotetrasiloxan (OMCTS); SiOC; low-k dielectric; Atomic Layer Deposition(ALD)|