화학공학소재연구정보센터
학회 한국공업화학회
학술대회 2016년 봄 (05/02 ~ 05/04, 여수 엑스포 컨벤션)
권호 20권 1호
발표분야 무기재료_포스터
제목 Epitaxial growth of multi-layer hexagonal boron nitride on sapphire
초록 Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multi-layer hexagonal boron nitride on a sapphire substrate by using low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA’ stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows highly improved carrier mobility, because the ultra-flatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.
저자 장아랑, 신현석
소속 울산과학기술원
키워드 Hexagonal boron nitride; Chemical vapor deposition; sapphire
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