화학공학소재연구정보센터
학회 한국재료학회
학술대회 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔)
권호 19권 2호
발표분야 A. 전자/반도체 재료(Electronic and Semiconductor Materials)
제목 Property of hydrothermally grown ZnO nanowires on aerosol deposited  Al-doped ZnO seed layer.
초록 Zinc oxide (ZnO) is a promising compound semiconductor material due to its advantages as optical devices emitting UV/blue light. The wide band gap semiconductor as ZnO (3.37 eV at room temperature) usually shows good optical transmission in the visible wave length (400 - 700 nm) regions, it has been applied of gas sensors, piezoelectric devices, varistors, optoelectronics, solar cells, photodetectors, etc. Generally, the electrical, optical, thermal and chemical stability in ZnO are affected by the band structure. Thus, ZnO contain several intrinsic defects such as interstitial Zn, O vacancies, Zn vacancies, interstitial O. Such defects form either donor level or acceptor level in the energy band gap that would greatly affect the luminescent properties of ZnO.  
In this work, we fabricated nano-grained AZO seed layer with three differential Al contents on soda-lime glass substrate by AD method at room temperature and we grew the ZnO nanowires on the AZO seed layer using the hydrothermal process. The crystal and micro-structure of AZO seed layer and the hydrothermally grown ZnO nanowires were characterized by SEM, EDXS and XRD. The optical properties of ZnO nanowires on the AZO seed layer and AD deposited AZO seed layer films due to differential Al-doping concentration were measured and analyzed with the PL spectra.
저자 Jungkeun Lee1, Soohwan Lee2, Soo-Bin Kang3, Im-Jun No1, Young-Min Kong2, Jungho Ryu3, Dae-Yong Jeong1
소속 1School of Materials Engineering, 2Inha Univ., 3Korea
키워드 ZnO; Nanowire; Aerosol deposition; Hydrothermal method; Photoluminescence property; Low temperature
E-Mail