|학술대회||2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트)|
|발표분야||F. 광기능/디스플레이 재료(Optical Functional and Display Materials)|
|제목||Improvement in the negative bias stability on the water vapor permeation barriers on Hf doped SnOx thin film transistors|
|초록|| Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs.
In the present work, Al2O3 and TiO2 thin films were deposited on poly ether sulfon (PES) and SnOx-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to Al2O3/TiO2 layered structure. For example, Al2O3, TiO2 single layer, Al2O3/TiO2 double layer and Al2O3/TiO2/Al2O3/TiO2 multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and SnOx-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of SnOx-based TFT devices were significantly improved. Therefore, the results indicate that Al2O3/TiO2 water vapor barrier layers are highly proper for use as a passivation layer in SnOx-based TFT devices.
|저자||한동석, 문대용, 박재형, 강유진, 윤돈규, 신소라, 박종완|
|키워드||Thin film transistor; SnO-based TFT; Passivation; ECR-ALD; Water vapor transmission rate (WVTR)|