화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.15, No.4, H94-H96, 2012
Improvement of Heat Resistance of Hydrogen Doped ZnO:Ga Thin Films
This study shows the excellent heat resistance of hydrogen doped ZnO:Ga (GZO) films successfully fabricated by stacking a GZO protection film. The poor heat resistance of hydrogen doped GZO films caused by the departure of hydrogen from films after the RTA treatment exceeded 400 degrees C results in an increase in the resistivity. It means they are not suitable for thin film practical application processing with elevated temperatures. The electrical properties can be seen that the resistivity and carrier concentration of the GZO/GZO:H films remains nearly stable up to the annealing temperature of 600 degrees C, and they maintain low resistivity below 5.6 x 10(-4) Omega-cm. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.021204esl] All rights reserved.