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Electrochemical and Solid State Letters, Vol.15, No.4, H91-H93, 2012
Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors
Sol-gel zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated at a low temperature of 250 degrees C using an ultraviolet (UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to the incorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealing improve the electrical performance of the ZTO TFT with mobility of 2 cm(2)/V.s by effective dissociation of organic groups and promotion of metal-oxide-metal bonds formation, confirmed by X-ray photoelectron spectroscopy of the ZTO films. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.013204esl] All rights reserved.