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Electrochemical and Solid State Letters, Vol.15, No.4, G9-G11, 2012
Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor
The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO2/InP (001) were investigated as a function of annealing temperature in an NH3 ambient. The levels of interfacial oxides of In(PO3)(3) and InPO4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO2/InP interface due to chemical reactions between In2O3 and the NH3 vapor after a rapid thermal annealing at 600 degrees C. The diffusion of interfacial In and P oxides into HfO2 film was found to be suppressed by presence of thick InN layer. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.008204esl] All rights reserved.