화학공학소재연구정보센터
Advanced Materials, Vol.23, No.48, 5822-5822, 2011
Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites
A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.