화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.159, No.6, H565-H569, 2012
Preparation and Optoelectronic Properties of Cu2ZnSnS4 Film
The Cu2ZnSnS4 (CZTS) film was successfully prepared and the Raman peaks at 251, 288, 335 and 368 cm-1 were observed. The light absorption coefficient of CZTS film is higher than 104 cm-1 and the energy bandgap is estimated to be about 1.5 eV. The photo-current response under different electrical field was studied for CZTS film. Persistent photoconductivity effect was observed and the decay time of current was studied under different electrical fields. The decay time of current decreased from 218 s to 0.2646 s with the electrical field reducing from 1 V to 1 x 10-4 V, respectively.