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Electrochemical and Solid State Letters, Vol.14, No.5, H212-H214, 2011
Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization
In0.7Ga0.3As channel n-MOSFETs (metal-oxide-semiconductor field-effect transistors) with Si-doped S/D and self-aligned Ni-InGaAs contact were demonstrated for the first time. The salicide-like metallization process employed a direct reaction between Ni and Si-doped InGaAs, followed by the removal of the unreacted Ni. As compared with n-MOSFETs with metallic Ni-InGaAs S/D (i.e. no Si doping in S/D), n-MOSFETs with Ni-InGaAs contact formed on Si-doped S/D show significantly improved OFF-state current I-OFF in the linear and saturation regions. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3559754] All rights reserved.