화학공학소재연구정보센터
Applied Surface Science, Vol.257, No.7, 2516-2519, 2011
Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates
SnO2 thin films were grown using metalorganic chemical vapor deposition (MOCVD) system on sapphire substrates with three different orientations: r-cut (0 1 (1) over bar 2), a-cut (1 1 (2) over bar 0), and m-cut (1 0 (1) over bar 0). All the deposited films were epitaxial rutile films. The epitaxial orientation relationships were determined by X-ray Phi-scans: [0 1 0]SnO2 parallel to[1 0 0]Al2O3 and [1 0 (1) over bar ]SnO2 parallel to[(1) over bar (2) over bar 1]Al2O3 for the r-cut substrate; [0 1 0]SnO2 parallel to[0 0 1]Al2O3 and [1 0 (1) over bar ]SnO2 parallel to[1 (1) over bar 0]Al2O3 for the a-cut substrate; [0 1 0]SnO2 parallel to[0 0 1]Al2O3 and [1 0 0]SnO2 parallel to[0 1 0]Al2O3 for the m-cut substrate. The X-ray rocking curves yielded full width at half maximum (FWHM) of 0.78 degrees, 1.32 degrees and 0.70 degrees for the (1 0 1) and (0 0 2) reflections of the SnO2 films on r-, a-, and m-cut sapphire substrates, respectively. The room-temperature photoluminescence (PL) spectra of SnO2 films grown on a-cut and m-cut substrates only showed a broad deep-level luminescence band. While a UV band-edge luminescence peak was observed for the film grown on r-cut substrate. (C) 2010 Elsevier B.V. All rights reserved.