- Previous Article
- Next Article
- Table of Contents
Journal of the Electrochemical Society, Vol.158, No.4, H379-H389, 2011
Breaking-In a Pad for Scratch-Free, Cu Chemical-Mechanical Polishing
This paper presents a quantitative analysis of the topography and material properties of new and broken-in chemical-mechanical polishing (CMP) pads. Approximately 50 Cu wafers were polished under typical CMP conditions to break-in the pad. The changes in material properties were measured using a Hysitron TriboIndenter, and the changes in the topography of the pad were measured using a Tencor P-10 Profilometer. Additionally, scanning electron microscopy micrographs are presented to show the qualitative difference between broken-in and new pad surfaces. Polishing 56 Cu wafers decreased the average pad modulus from 0.66 to 0.34 GPa and the average pad hardness from 0.05 to 0.03 GPa. Furthermore, as a result of breaking-in the pad, the average asperity radius of curvature increased from 16 to 93 mu m. The increase in the pad asperity radius of curvature decreased the severity of scratching. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3545066] All rights reserved.