화학공학소재연구정보센터
Applied Surface Science, Vol.256, No.12, 3906-3911, 2010
Low-temperature deposition of alpha-Al2O3 films by laser chemical vapor deposition using a diode laser
We prepared Al2O3 films by laser chemical vapor deposition (LCVD) using a diode laser and aluminum acetylacetonate (Al(acac)(3)) precursors and investigated the effects of laser power (P-L), deposition temperature (T-dep), and total pressure (P-tot) in a reaction chamber on the crystal phase, microstructure, and deposition rate (R-dep). An amorphous phase was obtained at P-L = 50W, whereas an alpha-phase was obtained at P-L > 100 W. At P-L = 150 and 200W (104)- and (012)-oriented alpha-Al2O3 films were obtained, respectively. The R-dep of alpha-Al2O3 films increases with decreasing P-L and P-tot. Single-phase alpha-Al2O3 film was obtained at T-dep = 928 K, which is about 350 K lower than that obtained by conventional thermal CVD using Al(acac)(3) precursor. (C) 2010 Elsevier B.V. All rights reserved.