Applied Surface Science, Vol.256, No.7, 2289-2292, 2010
Ag-N doped ZnO film and its p-n junction fabricated by ion beam assisted deposition
Ag-N doped ZnO film was synthesized by ion beam assisted deposition and its electrical properties and annealing property were investigated. The films remained p-type even after annealing at 400 degrees C in air for 10 min. While the annealing temperature went up to 500 degrees C, the conduction type of these films shifted from p-type to n-type. The p-type ZnO film revealed low resistivity (0.0016 Omega cm), low Hall mobility (0.65 cm(2) V (1) s (1)) and high carrier concentration (5.8 x 10(20) cm (3)). ZnO p-n homojunction consisting of a p-type layer (Ag-N doped ZnO film) and an n-type layer (In-doped ZnO film) had been fabricated by ion beam assisted deposition. With electrical measurement, its current-voltage curve had a typical rectifying characteristic with current rectification ratio of 25 at bias +/-5 V and a reverse current of 0.01 mA at 5 V. The depletion width was estimated 3.8 nm by using p-n junction equation. (C) 2009 Elsevier B. V. All rights reserved.