화학공학소재연구정보센터
Solid-State Electronics, Vol.53, No.8, 837-840, 2009
Microstructures in directly bonded Si substrates
We have investigated using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) the microstructures of Direct Silicon Bonding (DSB) substrates which were prepared by bonding a Si(011) wafer to a Si(001) wafer. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after the interface oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate. (C) 2009 Elsevier Ltd. All rights reserved.