화학공학소재연구정보센터
Solid-State Electronics, Vol.52, No.7, 1043-1046, 2008
Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor
An InGaN/GaN light-emitting diode (LED) combined with a metal-oxide semiconductor (MOS) capacitor has been fabricated for high electrostatic discharge (ESD) protection. By connecting a MOS capacitor in parallel with the GaN-based LED, a level of defense against the ESD is significantly strengthened from 200 to 1900 V of human body mode (HBM), which corresponds to 6- to 7-fold enhancement in the ESD robustness of LEDs. (C) 2008 Elsevier Ltd. All rights reserved.