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Journal of the Electrochemical Society, Vol.156, No.7, H528-H534, 2009
Controlling Scratching in Cu Chemical Mechanical Planarization
In the manufacture of advanced semiconductor devices, undesirable scratches are produced during such fine-scale material removal processes as chemical mechanical planarization (CMP). In this paper, the upper bound loads for scratching in CMP at single-particle contacts are estimated and validated by atomic force microscope experiments on thin, homogeneous coatings. The upper limits for the scratch width and depth are estimated and validated by polishing experiments. For a Cu surface polished on a Rohm and Haas IC1000 pad with Al2O3 or SiO2 abrasives, the maximum scratch width is about one-half of the abrasive particle diameter. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3121964] All rights reserved.