화학공학소재연구정보센터
Journal of Vacuum Science & Technology A, Vol.28, No.1, 16-19, 2010
Effects of Al doping and annealing on chemical states and band diagram of Y2O3/Si gate stacks studied by photoemission and x-ray absorption spectroscopy
The authors have investigated the effects of Al doping and annealing on the photoemission spectra and thermal stability of Y2O3/Si gate stacks by photoemission spectroscopy and x-ray absorption spectroscopy. They have found that the SiO2 components diffuse into the Y2O3 layer by annealing, resulting in the formation of Y silicate; however, the formation of metallic Y silicide is not observed. The changes in valence-and conduction-band offsets by doping Y2O3 with Al with respect to both Al concentration and annealing temperature have been systematically investigated. With an increase in the Al concentration, the band offsets and band gaps increase and the conduction-band edges change nonlinearly. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3259869]