화학공학소재연구정보센터
Journal of Crystal Growth, Vol.311, No.10, 2783-2786, 2009
Heteroepitaxial growth of InN layers on (111) silicon substrates
Indium nitride (InN) layers were grown on (111) silicon substrates by reactive magnetron sputtering using an indium target. Atomic force microscope, X-ray diffraction, and Raman spectroscopy analysis revealed that highly c-axis preferred wurtzite InN layers with very smooth surface can be obtained on (111) silicon substrates at a substrate temperature as low as 100 degrees C. The results indicate that the reactive sputtering is a promising growth technique for obtaining InN layers on silicon substrates at low substrate temperature with low cost and good compatibility with microelectronic silicon-based devices. (C) 2009 Elsevier B.V. All rights reserved.