화학공학소재연구정보센터
Applied Surface Science, Vol.255, No.8, 4421-4424, 2009
Growth and field emission properties of globe-like diamond microcrystalline-aggregate
The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti mental layer was used as substrate. The fabricated diamond was evaluated by Raman scattering spectroscopy, X-ray diffraction spectrum (XRD), and scanning electron microscope (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates exhibited good electron emission properties. The turn-on field was only 0.55 V/mu m, and emission current density as high as 11 mA/cm(2) was obtained under an applied field of 2.9 V/mu m for the first operation. The growth mechanism and field emission properties of the globe-like diamond microcrystalline-aggregates are discussed relating to microstructure and electrical conductivity. (C) 2008 Elsevier B. V. All rights reserved.