화학공학소재연구정보센터
Applied Surface Science, Vol.255, No.5, 2646-2650, 2008
Low-temperature growth and optical properties of Ce-doped ZnO nanorods
Ce-doped ZnO nanorods were prepared by sol-gel method with low annealing temperature of 500 degrees C. The effects of Ce doping on the structural and optical properties of ZnO nanorods were investigated in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman-scattering spectroscopy measurements. The XRD results showed that Ce was doped into ZnO nanorods because of no diffraction peaks of Ce or cerium oxide in the pattern. The synthesis temperature of Ce-doped ZnO nanorods decreased from 900 to 500 degrees C compared to that of pure ZnO nanorods. Compared with pure ZnO, UV peaks shifted towards the blue color and the intensity of visible peaks decreased after Ce doping. The PL properties of Ce-doped ZnO nanorods depend on both the synthesis temperatures and the dopant. In Raman spectra of doped samples, some classical modes, such as A(1) and E-1 modes, disappear, and the E-2 modes blue shift. (C) 2008 Elsevier B.V. All rights reserved.