Applied Surface Science, Vol.254, No.23, 7770-7773, 2008
Structural properties of GaAs nanostructures formed by a supply of intense As-4 flux in droplet epitaxy
We investigated detailed structural properties of GaAs nanostructures formed by a supply of intense As-4 flux to Ga droplets. Scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) revealed that whisker-like nanostructures had formed on the truncated cone-shaped bases after crystallization. Moreover, electron energy loss spectroscopy in scanning transmission electron microscopy (STEM-EELS) revealed that elemental Ga atoms remained inside the nanostructures while outside, some had crystallized into GaAs. These findings suggest that crystallization started at the edges of the droplets and the GaAs grew upward along the periphery of the droplets until the droplets were completely covered with crystallized GaAs. (C) 2008 Elsevier B. V. All rights reserved.