Applied Surface Science, Vol.254, No.19, 6106-6108, 2008
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
The flat band voltage shifts of HfO2/SiO2/nSi capacitors with ultra-thin La2O3 insertion at HfO2/SiO2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La2O3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO2 and La2O3 at SiO2 interface can be estimated to be 0.40 V. (c) 2008 Elsevier B.V. All rights reserved.