화학공학소재연구정보센터
Applied Surface Science, Vol.254, No.18, 5670-5674, 2008
Copper diffusion in TaN-based thin layers
The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer. (c) 2008 Elsevier B.V. All rights reserved.