화학공학소재연구정보센터
Advanced Functional Materials, Vol.19, No.5, 772-778, 2009
Synthesis, Characterization, and Field-Effect Transistor Performance of Thieno[3,2-b]thieno[2',3':4,5]thieno [2,3-d]thiophene Derivatives
The synthesis, characterization, and field-effect transistor (FET) properties of a new class of thieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophen derivatives are described. The optical spectra of their films show the presence of stronger interactions between molecules in the solid state. Thermal analyses reveal that the three materials are thermally stable and have no phase transitions at low temperature. The crystal structures are determined, and show pi-stacked structures and intermolecular S...S contacts. These organic materials exhibit p-type FET behavior with hole mobilities as high as 0.14 cm(2) V-1 s(-1) and an on/off current ratio of 10(6). These results indicate that thieno[3,2-b]thieno [2',3':4,5]thieno[2,3-d]thiophene, as a linear pi-conjugated system, is an effective building block for developing high-performance organic semiconductors.