화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.155, No.4, H224-H227, 2008
A study on improving the reliability of polysilicon TFTs employing dual-layered gate insulator
The reliability of polysilicon thin-film transistors (poly-Si TFTs) employing the dual-layered gate insulator was investigated. We suggested the use of the double gate insulator, which is composed of silicon oxide (SiO2) and silicon nitride (SiNx), to overcome the lower gate-oxide reliability and high leakage-current problems caused by the thin gate insulator of poly-Si TFTs. The breakdown field increased to 9 MV/cm and the leakage current decreased by up to 1 order of magnitude compared with that of TFT using the single gate insulator. Experimental results showed that the reliability of poly-Si TFTs employing the SiNx/SiO2 gate insulator was greatly improved by the reduced charge trapping and the relatively larger thermal conductivity of the SiNx film. (C) 2008 The Electrochemical Society.