화학공학소재연구정보센터
Journal of Crystal Growth, Vol.307, No.1, 82-86, 2007
Effect of a Fe3Si buffer layer for the growth of semiconducting beta-FeSi2 thin film on stainless steel substrate
This paper reports a Fe3Si buffer layer for the growth of semiconducting beta-FeSi2 film on stainless steel (SS) substrate. It was formed through the silicidation reaction of Fe and Si at a Fe-rich interface at an elevated temperature of 600 degrees C. beta-FeSi2 film was deposited on it at low temperature around 400 degrees C. Auger electron spectroscopy depth profile showed that the inter-diffusions of Fe, Si and impurities contained in the SS substrate were effectively blocked by the buffer layer. The adhesive ability to SS substrate and crystallinity of beta-FeSi2 film were clearly improved by the introduction of the buffer layer, thus also induced the decrease of residual carrier concentration, which was revealed by capacity-voltage measurement. (C) 2007 Elsevier B.V. All rights reserved.