화학공학소재연구정보센터
Journal of the Korean Industrial and Engineering Chemistry, Vol.19, No.1, 117-121, February, 2008
정전분무법을 이용한 YSZ 박막 제조
Preparation of Thin YSZ Film by Electrostatic Spray Deposition
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초록
본 연구에서는 정전분무법을 이용하여 YSZ 박막을 제조하였다. 제조된 박막은 제조시 전구체 용액, 지지체 온도 등에 크게 영향을 받았으며, 특히 지지체 온도가 400 ℃일 때 치밀한 YSZ 박막을 형성할 수 있었다. 최적조건 하에서 정전분무법을 활용하면 약 12 μm/h의 속도로 치밀한 YSZ 박막을 형성할 수 있었다. 제조된 박막은 XRD, FE-SEM, EDX 등을 이용하여 분석하였다.
In this study, thin YSZ film was prepared by electrostatic spray deposition. The morphology of thin film was strongly influenced by precursor solution and substrate temperature. Especially, dense YSZ film was obtained at the substrate temperature of 400 ℃. The YSZ film growth rate was 12 μm/h at the optimum conditions. Product film was characterized by XRD, FE-SEM and EDX.
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