Solid-State Electronics, Vol.50, No.9-10, 1670-1672, 2006
Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics
In this work the effect of hafnium content on charge trapping characteristics of Hf-based MOS gate dielectrics is investigated. Direct comparison of charge trapping phenomena in HfO2 and HfSiO4 formed on the Si surface by mist deposition is carried out. Results obtained demonstrate that the amount of trapping increases as the Si content in Hf-Si-O network increases, and hence, in advanced MOS gate applications HfO2 is expected to display more stable electrical characteristics than HfSiO4. (C) 2006 Elsevier Ltd. All rights reserved.