Solid-State Electronics, Vol.50, No.5, 858-864, 2006
Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology
The basic active and passive elements for a 50-nm InGaAs-InA1As-InP HEMT process with pseudomorphic InGaAs channel have been designed and realized. InP HEMTs with 50-nm gate length, metal-insulator-metal (MIM) capacitors and thin film resistors (TFRs) have been designed and fabricated. A 2 x 15 mu m HEMT showed an extrinsic peak transconductance of 1130 mS/mm at a drain-source voltage of 2.0 V. A 2 x 35 pin HEMT exhibited a current gain cut-off frequency of 200 GHz and a power gain cut-off frequency of 3 10 GHz at a drain-source voltage of 1.1 V. Passive device results included 85 Omega/rectangle tantalum nitride TFRs and 300 pF/mm(2) Si3N4 MIM capacitors. The integration of the components in a microstrip-based monolithic microwave integrated circuit (MMIC) process has been demonstrated by designing, processing and testing of a wideband resistive feedback amplifier. (c) 2006 Elsevier Ltd. All rights reserved.