화학공학소재연구정보센터
Solid-State Electronics, Vol.50, No.3, 448-455, 2006
Analytical model of drain current of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex NMOSFETs and PMOSFETs for circuit simulation
Analytical models of drain current of strained-Si/strained-Si1-YGeY/relaxed-Si1-XGeX (X < Y) n-channel and p-channel MOSFETs are presented. The field-dependent mobility variations and velocity saturation of carriers are taken into account in these models. The drain current model of p-channel MOSFET considers carrier transport at the top heterointerface in SiGe as well as at the Si/SiO2 interface. These models have been implemented in SABER, a circuit simulator. The results from the models show excellent agreement with experimental data. (c) 2006 Elsevier Ltd. All rights reserved.