화학공학소재연구정보센터
Solid-State Electronics, Vol.47, No.6, 1021-1025, 2003
Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor
The rapid thermal annealing effects on thin Pt/Y2O3/Si MOS capacitors have been investigated. After post-metallization annealing at 425 degreesC in 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density similar to7.7 x 10(10) cm(-2) and a minimum interface state density similar to3.6 x 10(10) cm(-2) eV(-1). The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y2O3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent. (C) 2003 Elsevier Science Ltd. All rights reserved.