Solid-State Electronics, Vol.45, No.5, 645-653, 2001
The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs
A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations.