화학공학소재연구정보센터
Current Applied Physics, Vol.6, No.3, 545-548, 2006
Magneto-transport properties of amorphous Ge1-xMnx thin films
Amorphous Ge1-xMnx thin films were grown in order to expand the solubility limit of Mn. The amorphous Ge1-xMnx thin films were grown on (1 0 0)Si substrate at 373 K by using a thermal evaporator. The solubility of Mn in amorphous Ge1-xMnx thin films reaches up to 17 at.%. The amorphous Ge1-xMnx thin films are ferromagnetic and the T-C is similar to 150 K. The largest saturation magnetization of amorphous Ge1-xMnx thin films is similar to 100 emu/cm(3) for x = 0.118 at 5 K. The variation of electrical resistivity with respect to temperature reveals that the amorphous Ge1-xMnx thin films have semiconductor characteristics. The in-field electrical resistivity of amorphous Ge1-xMnx thin films is lower than the zero-field electrical resistivity when T < T-C, but the reverse is true when T > T-C. However, the in-field electrical resistivity of amorphous Ge1-xMnx thin films is always higher than the zero-field electrical resistivity when x > similar to 12 at.%. Magneto-transport characteristics of amorphous Ge1-xMnx thin films show anomalous Hall phenomenon and negative magnetoresistance when T < T-C. The results suggest that the Mn atoms in amorphous Gel-,Mn, thin films be related to spin dependent scattering depending on magnetization. (c) 2005 Elsevier B.V.. All rights reserved.