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Electrochemical and Solid State Letters, Vol.10, No.9, H270-H272, 2007
In/ITO p-type electrode for high-brightness GaN-based light emitting diodes
Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46 x 10(-3) Omega cm(2) and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530 degrees C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized Ni/Au contacts. (c) 2007 The Electrochemical Society.