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Electrochemical and Solid State Letters, Vol.9, No.6, F53-F55, 2006
LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
A novel method to fabricate the memory structure of LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAlO3 nanocrystals are estimated to be about 6 nm and 1.1x10(12) cm(-2), respectively. Superior performances in terms of a large memory window, long data retention, and robust endurance were observed.