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Electrochemical and Solid State Letters, Vol.7, No.4, G72-G74, 2004
Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterostructures
A Si/Ti/Al/Ni/Au metallization scheme was investigated for the formation of very low ohmic contacts on undoped AlGaN/GaN heterostructures. The influences of the silicon layer thickness and the annealing temperature on the contact resistance were studied using linear transmission line model (TLM) patterns. A contact resistance of 0.23 Omega mm, corresponding to a specific contact resistance of 1.06 x 10(-6) Omega cm(2), was achieved with a 30 Angstrom thick silicon layer annealed at 800 degreesC for 30 s. (C) 2004 The Electrochemical Society.