화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.3, No.10, 485-488, 2000
Atomic layer epitaxy of vanadium oxide thin films and electrochemical behavior in presence of lithium ions
Vanadium oxide films have been deposited by atomic layer epitaxy (ALE) at temperatures ranging from 50 to 200 degrees C from vanadyl triisopropoxide and water precursors. The growth mechanism was studied in situ by quartz crystal microgravimetry allowing us to distinguish different growth regimes. ALE growth extends from near room temperature to similar to 150 degrees C. For higher temperatures there was a change in the ALE regime, followed by a different chemical vapor deposition regime involving the direct decomposition of the vanadium precursor at temperatures higher than ca. 180 degrees C. As-grown films were amorphous and crystallized easily during thermal post-treatments. Films annealed at 400 degrees C offered excellent electrochemical stability and cyclability for lithium ion insertion/deinsertion between 3 and 3.8 V.