화학공학소재연구정보센터
Advanced Materials, Vol.18, No.20, 2720-2720, 2006
UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering
A UV-Iight-emitting homojunction ZnO LED is grown by radiofrequency sputtering at high temperature, improving the structural, electrical, and optical properties of the n- and p-type ZnO layers. The figure shows a comparison of the electroluminescence spectra of A) a p-n homojunction ZnO LED and B) a ZnO LED with Mg0.1Zn0.9O layers used as energy barrier layers. Such materials are of interest for their potential use in long-lifetime solid-state lighting, high-density information storage, secure communication, and chemical/biological-agent monitoring.