Applied Surface Science, Vol.252, No.22, 7794-7800, 2006
Synergetic effect between ion energy and sample temperature in the formation of distinct dot pattern on Si(110) by ion-sputter erosion
We observed a synergetic effect between ion energy and sample temperature in the formation of distinct dot pattern on Si(110) by Ar+ ion sputtering. The ion flux was 20 mu A/cm(2), a value smaller than those used in preceding reports by one or two orders of magnitude. In experiments, the ion energy was from 1 to 5 keV, and the temperature from room temperature to 800 degrees C. A phase diagram indicating the ranges of ion energy and temperature within which distinct dot patterns can be achieved has been obtained. Data analyses and simulation results reveal that the synergetic effect is consistent with the effect of the Ehrlich-Schwoebel step-edge barrier, rather than the Bradley-Harper model. (c) 2005 Elsevier B.V. All rights reserved.