화학공학소재연구정보센터
Applied Surface Science, Vol.252, No.15, 5572-5574, 2006
Nanowire growth on Si wafers by oxygen implantation and annealing
We report on nanowire formation on oxygen implanted Si wafers. In this method, a Si wafer is first oxygen-implanted and then annealed at high temperatures in At ambient to promote growth of nanowires with high aspect ratio. Their lengths range from several micrometers to thousands of micrometers and their diameters range from tens of nanometers to a few microns. (c) 2006 Elsevier B.V. All rights reserved.