화학공학소재연구정보센터
Applied Surface Science, Vol.252, No.9, 3201-3208, 2006
Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study
Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using differen: methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping. (c) 2005 Elsevier B.V. All rights reserved.