화학공학소재연구정보센터
Applied Surface Science, Vol.249, No.1-4, 110-114, 2005
Electron induced deposition and in situ etching of CrOxCly films
In a 3 keV electron system, we have studied both electron beam induced CrOxCly deposition using precursor CrO2O2 and electron beam induced etching of as-deposited CrOxCly film using Cl-2. The CrO2Cl2 pressure, 6.5 x 10(-5) Torr, was experimentally observed to be a threshold for CrOxCly deposition. The Cr film is a composite of Cr, O and Cl with a ratio of Cr:O:Cl = 1:2.2:1.1, and under electron beam irradiation, O increases while Cl decreases. As-deposited CrOxCly films can be etched in situ by chlorine at a pressure of 6 x 10(-4) Torr with an electron flux of 10 mA CM, demonstrating that Cl-2 pressure is the key in initiating the etching reaction. (c) 2004 Elsevier B.V. All rights reserved.